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LBN150B01 Datasheet(PDF) 3 Page - Diodes Incorporated |
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LBN150B01 Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 7 page  Electrical Characteristics: Discrete NPN Transistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage VCBO 60 ⎯ V IC = 10uA, IE = 0 Collector-Emitter Breakdown Voltage VCEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage VEBO 6 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Collector-Base Cut Off Current ICBO ⎯ 50 nA VCB = 30V, IE = 0 Collector-Emitter Cut Off Current ICEO ⎯ 50 nA VCE = 30V, IB = 0 Emitter-Base Cut Off Current IEBO ⎯ 50 nA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 4) 150 ⎯ ⎯ VCE = 1V, IC = 100 μA 170 ⎯ ⎯ VCE = 1V, IC = 1 mA 160 ⎯ ⎯ VCE = 1V, IC = 10 mA 70 ⎯ ⎯ VCE = 1V, IC = 50 mA 30 ⎯ ⎯ VCE = 1V, IC = 100 mA DC Current Gain hFE 12 ⎯ ⎯ VCE = 1V, IC = 200 mA ⎯ 0.08 IC = 10 mA, IB = 1 mA ⎯ 0.16 IC = 50mA, IB = 5mA Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.36 V IC = 200mA, IB = 20mA Equivalent on-resistance RCE(SAT) ⎯ 1.8 Ω IC = 200mA, IB = 20mA Base-Emitter Turn-on Voltage VBE(ON) ⎯ 0.98 V VCE = 5V, IC = 200mA ⎯ 0.95 IC = 10mA, IB = 1mA VBE(SAT) ⎯ 1.1 V IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO ⎯ 4 pF VCB = 5.0 V, f = 1.0 MHz, IE = 0 Input Capacitance CIBO ⎯ 8 pF VEB = 5.0 V, f = 1.0 MHz, IC = 0 Input Impedance hIE 2 12 K Ω Voltage Feedback ratio hRE 0.1 10 x 10E-4 DS30749 Rev. 4 - 2 3 of 7 www.diodes.com LBN150B01 © Diodes Incorporated Small Signal Current Gain hFE 100 400 ⎯ hOE 3 60 μS VCE = 1.0V, Ic = 10mA, f = 1.0 KHz Output Admittance Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 20V, IC = 0mA, f = 100 MHz NF ⎯ 4 dB VCE = 5V, Ic = 100 uA, Rs = 1Ω, f =1 KHz Noise Figure SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns VCC = -3.0 V, IC = 10 mA, Rise Time tr ⎯ 35 ns VBE(OFF) = 0.5V, IB1 = 1.0 mA Typical Characteristics 1 10 100 1,000 0.1 1 10 100 V , COLLECTOR EMITTER CURRENT (V) Fig. 2 Safe Operating Area CE 0 50 100 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature A 150 200 250 300 350 0 |
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