DMS935E1 datasheet(2/5 Pages) PANASONIC

Part #	DMS935E1

Description	Silicon NPN epitaxial planar type

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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2 / 5 page

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This product complies with the RoHS Directive (EU 2002/95/EC).

DMS935E1

2

PT  Ta

0

200

160

40

120

80

25

100

75

50

150

125

DMS935E1_PT-Ta

Ambient temperature Ta (°C)

IC  VCE

hFE IC

VCE(sat) IC

0

12

2

10

4

8

6

60

50

40

30

20

10

Collector-emitter voltage VCE (V)

DMS935E1(Tr1)_IC-VCE

Ta = 25°C

IB = 950 µA

350 µA

450 µA

550 µA

650 µA

750 µA

850 µA

250 µA

150 µA

50 µA

0

10−1

500

300

400

200

100

1

10

102

Collector current IC (mA)

DMS935E1(Tr1)_hFE-IC

25°C

−

30°C

Ta = 85°C

VCE = 10 V

10−2

10−1

1

10

1

10

102

Collector current IC (mA)

DMS935E1(Tr1)_VCEsat-IC

25°C

−

30°C

Ta = 85°C

IC / IB = 30

Common characteristics chart

Characteristics charts of Tr

IC  VBE

Cob  VCB

fT  IC

0

1.2

0.8

0.4

50

40

30

20

10

DMS935E1(Tr1)_IC-VBE

Base-emitter voltage VBE (V)

25°C

−

30°C

Ta = 85°C

VO = 10 V

0

1

3.0

2.5

2.0

1.5

1.0

0.5

10

100

DMS935E1(Tr1)_Cob-VCB

Collector-base voltage VCB (V)

IE = 0

f = 1 MHz

Ta = 25°C

0

10−1

2000

1500

1000

500

1

10

102

DMS935E1(Tr1)_fT-IC

Collector current IC (mA)

VCE = 10 V

Ta = 25°C

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