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DMN601K Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN601K Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN601K Document number: DS30652 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 4 and 6) • ESD Protected Up To 2kV Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) SOT-23 Source EQUIVALENT CIRCUIT Gate Protection Diode Gate Drain D G S ESD protected up to 2kV TOP VIEW TOP VIEW Pin Out Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous Pulsed (Note 3) ID 300 800 mA Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) Pd 350 mW Thermal Resistance, Junction to Ambient RθJA 357 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.0 1.6 2.5 V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ 2.0 3.0 Ω VGS = 5V, ID = 0.05A Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms VDS = 10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. Halogen and Antimony Free. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. 6. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Please click here to visit our online spice models database. |
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