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DA2J101 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DA2J101 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page Ver. DED This product complies with the RoHS Directive (EU 2002/95/EC). Publication date: November 2010 1 DA2J101 Silicon epitaxial planar type For high speed switching circuits Features Small reverse current IR Short reverse recovery time trr Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage VR 80 V Maximum peak reverse voltage VRM 80 V Forward current IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current * IFSM 500 mA Junction temperature Tj 150 ° C Storage temperature Tstg –55 to +150 ° C Note) *: 1 t = 1 s Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.92 1.20 V Reverse voltage VR IR = 100 mA 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 1.2 pF Reverse recovery time * trr IF = 10 mA, VR = 6 V, Irr = 0.25 × IR 3 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz 3. *: trr measurement circuit 90% tp = 2 µs tr = 0.35 ns δ = 0.05 10% tr tp trr VR IF t t A Bias Application Unit (N-50BU) Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω Input Pulse Output Pulse IF = 10 mA VR = 6 V Irr = 0.25 × IR Package Code SMini2-F5-B Pin Name 1: Cathode 2: Anode Marking Symbol: A1 |
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