DCX122LH_1 datasheet(3/4 Pages) DIODES

Part #	DCX122LH

Description	COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DS30429 Rev. 3 - 2

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DCX (LO-R1) H

Electrical Characteristics PNP Section @TA = 25°C unless otherwise specified

R1, R2 Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

DCX122LH

DCX142JH

Vl(off)

-0.3

⎯

V

VCC = -5V, IO = -100μA

Input Voltage

DCX122LH

DCX142JH

Vl(on)

⎯

-2.0

V

VO = -0.3V, IO = -20mA

Output Voltage

VO(on)

⎯

-0.3V

V

IO/Il = -5mA/-0.25mA

Input Current

DCX122LH

DCX142JH

Il

⎯

-28

-13

mA VI = -5V

Output Current

IO(off)

⎯

-0.5

μA VCC = -50V, VI = 0V

DC Current Gain

DCX122LH

DCX142JH

Gl

56

⎯

VO = -5V, IO = -10mA

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz VCE = -10V, IE = -5mA, f = 100MHz

* Transistor - For Reference Only

Electrical Characteristics @TA = 25°C unless otherwise specified

R1-Only Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

⎯

V

IC = -50μA

Collector-Emitter Breakdown Voltage

BVCEO

-40

⎯

V

IC = -1mA

Emitter-Base Breakdown Voltage

DCX122TH

DCX142TH

BVEBO

-5

⎯

V

IE = -50μA

Collector Cutoff Current

ICBO

⎯

-0.5

μA

VCB = -50V

Emitter Cutoff Current

DCX122TH

DCX142TH

IEBO

⎯

-0.5

μA

VEB = -4V

Collector-Emitter Saturation Voltage

VCE(sat)

⎯

-0.3

V

IC = -5mA, IB = -0.25mA

DC Current Transfer Ratio

DCX122TH

DCX142TH

hFE

100

250

600

⎯

IC = -1mA, VCE = -5V

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz VCE = -10V, IE = 5mA, f = 100MHz

* Transistor - For Reference Only

-50

050

100

250

200

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Derating Curve - Total

A

°

150

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