JANUARY 2006 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP821xMD Overvoltage Protectors

Description

The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface

Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been

designed using the latest understanding of programmable protector technology to maximize performance.

The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to

the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an

essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or

power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary

loading of the power supply.

Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as

the overcurrent protector and coordination element.

allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is

designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 Ω LPM will be 48 A (600 V /

12.5 Ω), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination.

How to Order

Device

Package

Carrier

Order As

Marking Code

Standard Quantity

TISP8210MD

8-SOIC

Embossed Tape Reeled

TISP8210MDR-S

8210M

2500

M

1

1

2

8

S

-

R

D

M

1

1

2

8

P

S

I

T

D

M

1

1

2

8

P

S

I

T

t

i

n

U

e

u

l

a

V

l

o

b

m

y

S

g

n

i

t

a

R

V

0

=

DRM

-120

V

V

V

0

7

-

=

RRM

120

Non-repetitive peak impulse current (see Note 1)

2/10

µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)

5/310

µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)

10/1000

µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)

-167

-70

-60

A

Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)

100 ms

1 s

5 s

300 s

900 s

-11

-6.5

-3.4

-1.4

-1.3

A

Junction temperature

-55 to +150

°C

Storage temperature range

-65 to +150

°C

conditions.

2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive

current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.