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BAS40 Datasheet(PDF) 1 Page - Diodes Incorporated

Part # BAS40
Description  SURFACE MOUNT SCHOTTKY BARRIER DIODE
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BAS40 Datasheet(HTML) 1 Page - Diodes Incorporated

  BAS40_08 Datasheet HTML 1Page - Diodes Incorporated BAS40_08 Datasheet HTML 2Page - Diodes Incorporated BAS40_08 Datasheet HTML 3Page - Diodes Incorporated  
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BAS40 /-04 /-05 /-06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.008 grams (approximate)
Top View
BAS40
BAS40-04
BAS40-05
BAS40-06
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Forward Continuous Current (Note 1)
IFM
200
mA
Forward Surge Current (Note 1)
@ t < 1.0s
IFSM
600
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
PD
350
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RθJA
357
°C/W
Operating Temperature Range
TJ
-55 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
40
V
IR = 10μA
Forward Voltage
VF
380
1000
mV
tp < 300μs, IF = 1.0mA
tp < 300μs, IF = 40mA
Reverse Leakage Current (Note 2)
IR
20
200
nA
tp < 300μs, VR = 30V
Total Capacitance
CT
4.0
5.0
pF
VR = 0V, f =1.0MHz
Reverse Recovery Time
trr
5.0
ns
IF = IR = 10mA to IR = 1.0mA,
RL = 100Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS40 /-04 /-05 /-06
Document number: DS11006 Rev. 21 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated
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