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| DMN4034SSS-13 |
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DMN4034SSS Document Number DS32106 Rev 1 - 2 4 of 8 March 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4034SSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 40V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ 0.023 0.034 Ω VGS= 10V, ID= 6A 0.039 0.059 VGS= 4.5V, ID= 5A Forward Transconductance (Notes 7 & 8) gfs ⎯ 20.5 ⎯ S VDS= 15V, ID= 6A Diode Forward Voltage (Note 7) VSD ⎯ 0.87 1.1 V IS= 6A, VGS= 0V Reverse recovery time (Note 8) trr 11.9 ⎯ ns IS= 2.5A, di/dt= 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 4.9 ⎯ nC DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 453 ⎯ pF VDS= 20V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 79.1 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 40.5 ⎯ pF Total Gate Charge (Note 9) Qg ⎯ 4.9 ⎯ nC VGS= 4.5V VDS= 20V ID= 6A Total Gate Charge (Note 9) Qg ⎯ 10 ⎯ nC VGS= 10V Gate-Source Charge (Note 9) Qgs ⎯ 1.8 ⎯ nC Gate-Drain Charge (Note 9) Qgd ⎯ 2.4 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.7 ⎯ ns VDD= 20V, VGS= 10V ID= 1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 9) tr ⎯ 2.7 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 14 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 6 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. |
