DMN3730UFB4

Document number: DS35017 Rev. 3 - 2

2 of 6

www.diodes.com

December 2010

© Diodes Incorporated

DMN3730UFB4

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±8

Continuous Drain Current

(Note 5)

0.91

A

0.73

(Note 4)

0.75

Pulsed Drain Current

(Note 6)

3

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

0.69

W

(Note 4)

0.47

Thermal Resistance, Junction to Ambient

(Note 5)

180

°C/W

(Note 4)

258

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

3

μA

ON CHARACTERISTICS

Gate Threshold Voltage

0.45

-

0.95

V

Static Drain-Source On-Resistance (Note 7)

-

-

460

mΩ

560

730

Forward Transfer Admittance

40

-

-

mS

Diode Forward Voltage (Note 7)

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

64.3

-

pF

f = 1.0MHz

Output Capacitance

-

6.1

-

pF

Reverse Transfer Capacitance

-

4.5

-

pF

Gate Resistance

-

70

-

Ω

Total Gate Charge

-

1.6

-

nC

Gate-Source Charge

-

0.2

-

nC

Gate-Drain Charge

-

0.2

-

nC

Turn-On Delay Time

-

3.5

-

ns

Turn-On Rise Time

-

2.8

-

ns

Turn-Off Delay Time

-

38

-

ns

Turn-Off Fall Time

-

13

-

ns

Notes:

4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in

steady-state condition.

5. Same as note 4, except the device measured at t

≤ 10 sec.

6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10

μs.

7. Measured under pulsed conditions to minimize self-heating effect. Pulse width

≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.