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2SC3419 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3419 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC3419 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. • Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SA1356 Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 80 mA Ta = 25°C 1.2 Collector power dissipation Tc = 25°C PC 5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ― ― 1.0 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1.0 µA Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 40 ― ― V hFE (1) (Note) VCE = 2 V, IC = 50 mA 70 ― 240 DC current gain hFE (2) VCE = 2 V, IC = 0.8 A 13 60 ― Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA ― 0.25 0.8 V Base-emitter voltage VBE VCE = 2 V, IC = 500 mA ― 0.90 1.1 V Transition frequency fT VCE = 2 V, IC = 0.5 A 50 100 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 10 ― pF Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.) |
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