DST847BDJ

Document number: DS32035 Rev. 1 - 2

2 of 5

www.diodes.com

January 2010

© Diodes Incorporated

DST847BDJ

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

50

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous (Note 3)

100

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

300

mW

Thermal Resistance, Junction to Ambient (Note 3)

417

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

0.000001

0.0001

0.001

0.01

0.1

1

10

100

10,000

Fig. 1 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001

0.001

0.01

0.1

1

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12

θ

R

(t) = r(t) *

θJA

R

R

= 370°C/W

θ

θ

JA

JA

P(pk)

t

2

1,000

D = 0.7

D = 0.5

D = 0.3

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.1

0.00001

0.001

0.1

10

1,000

Fig. 2 Single Pulse Maximum Power Dissipation

t , PULSE DURATION TIME (s)

1

1

10

100

1,000

0.1

Single Pulse

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12

θ

R

(t) = r(t) *

θJA

R

R

= 370°C/W

θ

θ

JA

JA

0

0.1

0.2

0.3

0.4

0

20

40

60

80

100

120

140

160

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 3 Power Dissipation vs. Ambient Temperature

Note 3