iC-MH

12 BIT ANGULAR HALL ENCODER

Rev B1, Page 6/23

ELECTRICAL CHARACTERISTICS

Operating conditions:

VPA, VPD = 5 V ±10 %, Tj = -40...125 °C, IBM adjusted to 200 µA , 4 mm NdFeB magnet, unless otherwise noted

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Line Driver Outputs

P01

Vs()hi

Saturation Voltage hi

Vs() = VPD − V();

CfgDR(1:0) = 00, I() = -4 mA

200

mV

CfgDR(1:0) = 01, I() = -50 mA

700

mV

CfgDR(1:0) = 10, I() = -50 mA

700

mV

CfgDR(1:0) = 11, I() = -20 mA

400

mV

P02

Vs()lo

Saturation Voltage lo

CfgDR(1:0) = 00, I() = -4 mA

200

mV

CfgDR(1:0) = 01, I() = -50 mA

700

mV

CfgDR(1:0) = 10, I() = -50 mA

700

mV

CfgDR(1:0) = 11, I() = -20 mA

400

mV

P03

Isc()hi

Short-Circuit Current hi

V() = 0 V;

CfgDR(1:0) = 00

-12

-4

mA

CfgDR(1:0) = 01

-120

-50

mA

CfgDR(1:0) = 10

-120

-50

mA

CfgDR(1:0) = 11

-60

-20

mA

P04

Isc()lo

Short-Circuit Current lo

V() = VPD;

CfgDR(1:0) = 00

4

12

mA

CfgDR(1:0) = 01

50

120

mA

CfgDR(1:0) = 10

50

120

mA

CfgDR(1:0) = 11

20

60

mA

P05

Ilk()tri

Leakage Current Tristate

TRIHL(1:0) = 11

-100

100

µA

P06

tr()

Rise-Time lo to hi at Q

RL = 100 Ω to VND;

CfgDR(1:0) = 00

5

20

ns

CfgDR(1:0) = 01

5

20

ns

CfgDR(1:0) = 10

50

350

ns

CfgDR(1:0) = 11

5

40

ns

P07

tf()

Fall-Time hi to lo at Q

RL = 100 Ω to VND;

CfgDR(1:0) = 00

5

20

ns

CfgDR(1:0) = 01

5

20

ns

CfgDR(1:0) = 10

50

350

ns

CfgDR(1:0) = 11

5

40

ns

OPERATING REQUIREMENTS: Serial Interface

Operating conditions: VPA, VPD = 5 V ±10 %, Ta = -40...125 °C, IBM calibrated to 200 µA;

Logic levels referenced to VND: lo = 0...0.45 V, hi = 2.4 V...VPD

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Max.

SSI Protocol (ENSSI = 1)

I001

Permissible Clock Period

250

ns

I002

Clock Signal Hi Level Duration

25

ns

I003

Clock Signal Lo Level Duration

25

ns

Figure 1: I/O Interface timing with SSI protocol