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2SA1201 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA1201
Description  Voltage Amplifier Applications Power Amplifier Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1201 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA1201
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −120 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−120
V
Emitter-base breakdown voltage
V (BR) EBO
IE = −1 mA, IC = 0
−5
V
DC current gain
hFE
(Note 3)
VCE = −5 V, IC = −100 mA
80
240
Collector-emitter saturation voltage
VCE (sat)
IC = −500 mA, IB = −50 mA
−1.0
V
Base-emitter voltage
VBE
VCE = −5 V, IC = −500 mA
−1.0
V
Transition frequency
fT
VCE = −5 V, IC = −100 mA
120
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
30
pF
Note 3: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
D
Part No. (or abbreviation code)
Lot No.
Note 4
Characteristics indicator


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