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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 780, REV. -

HERMETIC POWER MOSFET

N-CHANNEL

FEATURES:

MAXIMUM RATINGS

ALL RATINGS ARE AT T

A

= 25

°C UNLESS OTHERWISE SPECIFIED.

RATING

SYMBOL

MIN.

TYP.

MAX.

UNITS

GATE TO SOURCE VOLTAGE

-

-

±20

Volts

CONTINUOUS DRAIN CURRENT

-

-

3.0

2.4

Amps

PULSED DRAIN CURRENT

-

-

9.0

Amps

OPERATING AND STORAGE TEMPERATURE

-55

-

+150

°C

TERMAL RESISTANCE JUNCTION TO CASE

-

-

0.89

°C/W

-

-

140

Watts

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNITS

DRAIN TO SOURCE BREAKDOWN VOLTAGE

1000

-

-

Volts

DRAIN TO SOURCE ON STATE RESISTANCE

-

3.0

4.0

Ω

GATE THRESHOLD VOLTAGE

2.0

-

4.0

Volts

FORWARD TRANSCONDUCTANCE

2.0

3.56

-

S(1/

Ω)

ZERO GATE VOLTAGE DRAIN CURRENT

-

-

10

100

μA

GATE TO SOURCE LEAKAGE FORWARD

GATE TO SOURCE LEAKAGE REVERSE

-

-

-100

100

nA

TOTAL GATE CHARGE

GATE TO SOURCE CHARGE

GATE TO DRAIN CHARGE

-

32.5

6.0

14.6

-

nC

TURN ON DELAY TIME

RISE TIME

TURN OFF DELAY TIME

FALL TIME

-

13

19

42

33

25

40

90

55

nsec

DIODE FORWARD VOLTAGE

-

-

1.1

Volts

DIODE REVERSE RECOVERY TIME

REVERSE RECOVERY CHARGE

diS/dt = -100A/

μsec

-

615

2.92

-

nsec

μC

INPUT CAPACITANCE

OUTPUT CAPACITANCE

REVERSE TRANSFER CAPACITANCE

f = 1.0MHz

-

1316

117

26

1800

260

75

pF

SHD218414

SHD218414A

SHD218414B