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STP80NF55-08 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP80NF55-08 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STB80NF55-08T4, STP80NF55-08, STW80NF55-08 Electrical characteristics Doc ID 14511 Rev 2 5/15 Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 320 A VSD Forward on voltage ISD = 80 A, VGS = 0 1.5 V trr (2) Qrr IRRM 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A,VDD = 25 V di/dt=100 A/µs, Tj =150 °C (see Figure 18) 80 230 5.7 ns nC A |
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