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STB80NF03L-04T4 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB80NF03L-04T4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 13 page STB80NF03L-04T4 Electrical characteristics Doc ID 8479 Rev 4 5/13 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 15 V, ID= 40 A, RG =4.7 Ω, VGS=4.5 V Figure 16 - 30 270 110 95 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulse duration=300 µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VDD = 20 V di/dt = 100 A/µs Tj=150 °C - 75 0.15 4 ns µC A |
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