SSM6L13TU datasheet(7/8 Pages) TOSHIBA

Part #	SSM6L13TU

Description	TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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7 / 8 page

SSM6L13TU

2010-07-10

7

Q2 Data

|Yfs| - ID

0.1

1.0

10.0

-0.01

-0.1

-1

-10

ドレイン電流

ID (A)

ソース接地

VDS=-3V

Ta=25℃

C - VDS

10

100

1000

-0.1

-1

-10

-100

ドレイン・ソース間電圧

VDS (V)

Ciss

Coss

Crss

ソース接地

VGS=0V

f=1MHz

Ta=25℃

Ta=85°C

25°C

-25°C

t - ID

1

10

100

1000

-0.01

-0.1

-1

-10

ドレイン電流 ID (A)

toff

tr

ton

tf

ソース接地

VDD=-10V

VGS=0～-2.5V

Ta=25℃

IDR - VDS

0.001

0.01

0.1

1

10

0

0.2

0.4

0.6

0.8

1

ドレイン・ソース間電圧 VDS (V)

ソース接地

VGS=0V

Ta=25℃

Ta=85°C

25°C

-25°C

PD - Ta

0

200

400

600

800

1000

0

20

40

60

80 100 120 140 160

周囲温度 Ta(℃)

①

①FR4基板実装時

(25.4mm×25.4mm×1.6t)

Cu Pad :645mm2

②ｾﾗﾐｯｸ基板実装時

(25.4mm×25.4mm×0.8t)

Cu Pad :645mm2

②

1

10

100

1000

0.001

0.01

0.1

1

10

100

1000

Single pulse

a : Mounted on ceramic board

(25.4mm×25.4mm×0.8mm)

Cu Pad :25.4mm×25.4mm

b : Mounted on FR4 board

(25.4mm×25.4mm×1.6mm)

Cu Pad :25.4mm×25.4mm

c : Mounted on FR4 board

(25.4mm×25.4mm×1.6mm)

Cu Pad :0.45mm×0.8mm×3

a

b

c

Common Source

VDS = -3 V

Ta = 25°C

Pulse test

Common Source

VDD = -10 V

VGS = 0 to -2.5 V

Ta = 25 °C

RG = 4.7Ω

Drain current ID (A)

Drain–source voltage VDS (V)

Drain-source voltage VDS (V)

Common Source

Ta

= 25 °C

f

= 1 MHz

VGS = 0 V

Ambient temperature Ta (°C)

rth - tw

Pulse width tw (s)

(1): Mounted on FR4 board

(25.4mm

× 25.4mm × 1.6mm)

Cu Pad : 645 mm2)

(2): Mounted on ceramic board

(25.4mm

× 25.4mm × 0.8mm)

Cu Pad : 645 mm2)

Common Source

VGS=0V

Ta

= 25°C

Pulse test

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SSM6L13TU Datasheet(PDF) 7 Page - Toshiba Semiconductor

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