PD84008-E datasheet(4/15 Pages) STMICROELECTRONICS

Part #	PD84008-E

Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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4 / 15 page

Electrical characteristics

PD84008-E, PD84008S-E

4/15

2

Electrical characteristics

TCASE = +25

oC

2.1

Static

2.2

Dynamic

2.3

ESD protection characteristics

2.4

Moisture sensitivity level

Table 4.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

IDSS

VGS = 0 V

VDS = 25 V

1

µA

IGSS

VGS = 20 V

VDS = 0 V

1

µA

VGS(Q)

VDS = 10 V

ID = TBD mA

TBD

V

VDS(ON)

VGS = 10 V

ID = 1 A

0.27

0.31

V

CISS

VGS = 0 V

VDS = 7 V

f = 1 MHz

56

pF

COSS

VGS = 0 V

VDS = 7 V

f = 1 MHz

47

pF

CRSS

VGS = 0 V

VDS = 7 V

f = 1 MHz

2.2

pF

Table 5.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

P3dB

VDD = 7.5 V, IDQ = 250 mA

f = 870 MHz

8

9.5

W

GP

VDD = 7.5 V, IDQ = 250 mA, POUT = 2 W, f = 870 MHz

13

16.2

dB

hD

VDD = 7.5 V, IDQ = 250 mA, POUT = P3dB, f = 870 MHz

55

65

%

Load

mismatch

VDD = 9.5 V, IDQ = 250 mA, POUT = 15 W, f = 870 MHz

All phase angles

20:1

VSWR

Table 6.

ESD protection characteristics

Test conditions

Class

Human body model

2

Machine model

M3

Table 7.

Moisture sensitivity level

Test methodology

Rating

J-STD-020B

MSL 3

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PD84008-E Datasheet(PDF) 4 Page - STMicroelectronics

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