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M48Z512A Datasheet(PDF) 9 Page - STMicroelectronics

Part # M48Z512A
Description  4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z512A Datasheet(HTML) 9 Page - STMicroelectronics

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M48Z512A, M48Z512AY, M48Z512AV
Operating modes
Doc ID 5146 Rev 8
9/21
2.2
WRITE mode
The M48Z512A/Y/V is in the WRITE mode whenever W and E are active. The start of a
WRITE is referenced from the latter occurring falling edge of W or E. A WRITE is terminated
by the earlier rising edge of W or E.
The addresses must be held valid throughout the cycle. E or W must return high for a
minimum of tEHAX from E or tWHAX from W prior to the initiation of another READ or WRITE
cycle. Data-in must be valid tDVEH or tDVWH prior to the end of WRITE and remain valid for
tEHDX or tWHDX afterward. G should be kept high during WRITE cycles to avoid bus
contention; although, if the output bus has been activated by a low on E and G, a low on W
will disable the outputs tWLQZ after W falls.
Table 3.
READ mode AC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75 to 5.5 V, 4.5 to 5.5 V,
or 3.0 to 3.6 V (except where noted).
M48Z512A/Y
–70
M48Z512A/Y/V
–85
Unit
Min
Max
Min
Max
tAVAV
READ cycle time
70
85
ns
tAVQV
Address valid to output valid
70
85
ns
tELQV
Chip enable low to output valid
70
85
ns
tGLQV
Output enable low to output valid
35
45
ns
tELQX
(2)
2.
CL = 5 pF.
Chip enable low to output transition
5
5
ns
tGLQX
(2)
Output enable low to output transition
5
5
ns
tEHQZ
(2)
Chip enable high to output Hi-Z
30
35
ns
tGHQZ
(2)
Output enable high to output Hi-Z
20
25
ns
tAXQX
Address transition to output transition
5
5
ns


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