Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

nA

µA

Ω

S ( )

pF

nC

ns

A

V

ns

µC

MCA3703

Document Number 5519

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

100

2.0

4.0

100

-100

25

250

0.70

0.80

0.86

180

82

15

15

7.5

7.5

20

25

40

40

1.0

4.0

1.5

200

0.83

f = 1MHz

(MOSFET switching times are essentially

independent of operating temperature.)

Modified MOS POWER

symbol showing the intergal

P-N junction rectifier.

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate – Source Leakage Forward

Gate – Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain Source On-State

Resistance*

Forward Transductance *

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current Body

Diode

Source Current* (Body Diode)

Diode Forward Voltage *

Reverse Recovery Time

Reverse Recovery Charge

gfs

BODY– DRAIN DIODE RATINGS & CHARACTERISTICS

,

5

/

Notes

* Pulse Test: Pulse Width

≤ 300µs, δ≤ 2%