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BTB08-800TWRG Datasheet(PDF) 2 Page - STMicroelectronics

Part # BTB08-800TWRG
Description  Snubberless?? logic level and standard 8 A Triacs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB08-800TWRG Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
BTA08, BTB08 and T8 Series
2/12
Doc ID 7472 Rev 7
1
Characteristics
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave)
IPAK/D2PAK/DPAK/
TO-220AB
Tc = 110 °C
8A
TO-220AB Ins.
Tc = 100 °C
ITSM
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
80
A
F = 60 Hz
t = 16.7 ms
84
I²tI²t value for fusing
tp = 10 ms
36
A²s
dI/dt
Critical rate of rise of on-state current IG = 2
x IGT ,
tr ≤ 100 ns
F = 120 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol
Test conditions
Quadrant
T8
BTA08 / BTB08
Unit
T810 T835
TW
SW
CW
BW
IGT
(1)
VD = 12 V RL = 30 Ω
I - II - III
MAX.
10
35
5
10
35
50
mA
VGT
I - II - III
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125 °C
I - II - III
MIN.
0.2
V
IH
(2)
IT = 100 mA
MAX.
15
35
10
15
35
50
mA
IL
IG = 1.2 IGT
I - III
MAX.
25
50
10
25
50
70
mA
II
30
60
15
30
60
80
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125 °C
MIN.
40
400
20
40
400
1000
V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
MIN.
5.4
-
3.5
5.4
-
-
A/ms
(dV/dt)c = 10 V/µs
Tj = 125 °C
2.8
-
1.5
2.98
-
-
Without snubber
Tj = 125 °C
-
4.5
-
-
4.5
7


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