SILICON EPITAXIAL

NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

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Semelab Limited

melab Limited

melab Limited

melab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8963

Issue 1

Page 1 of 3

BFT29 / BFT30 / BFT31

Applications

A = 25°C unless otherwise stated)

BFT29

BFT30

BFT31

VCBO

Collector – Base Voltage

90V

70

60

VCEO

Collector – Emitter Voltage

80V

60

50

VEBO

Emitter – Base Voltage

5V

IC

Continuous Collector Current

1.0A

PD

Total Power Dissipation at

TA = 25°C

360mW

Derate Above 25°C

2mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Max

Units

RθJA

Thermal Resistance, Junction To Ambient

486

°C/W