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2N1132CSM Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N1132CSM
Description  HIGH SPEED MEDIUM POWER
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
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2N1132CSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7518, ISSUE 1
ELECTRICAL CHARACTERISTICS (T
Amb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max.
Unit
V(BR)CBO*
Collector-Base Breakdown Voltage
IC = 10µA
IE = 0
50
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC = 10mA
IB = 0
40
V
IE = 0
VCB = 50V
10
VCB = 30V
1
ICBO
Collector to Base Cut-Off Current
IE = 0
Tamb =150°C
100
IEBO
Emitter to Base Cut-Off Current
IC = 0
VEB = 5V
100
µA
ICER
Collector to Emitter Cut-Off Current
RBE <= 10
VCE = 50V
10
mA
IC = 150mA
30
100
hFE*
DC Current Gain
VCE = 10V
IC = 5mA
25
VCE(SAT)*
Collector To Emitter Saturation Voltage
1.3
VBE(SAT)*
Base To Emitter Saturation Voltage
IC = 150mA
IB = 15mA
1.5
V
DYNAMIC CHARACTERISTICS
VCB = 10V
IE = 0
COBO
Output Capacitance
f = 1.0MHz
45
VEB = 0.5V
IC = 0
CIBO
Input Capacitance
f = 1.0MHz
80
pF
IC = 50mA
VCE = 10V
| hfe |
Small Signal Current Gain
f = 20MHz
3.0
20
td
Delay Time
15
tr
Rise Time
25
ts
Storage Time
80
tf
Fall Time
VCC = 30V
IC = 150mA
IB1 - IB2 = 15mA
25
nS
* Pulse test tp = 300µs, δ < 2%
THERMAL CHARACTERISTICS
Max.
Unit
Rth j-Amb
Thermal resistance to ambient
375
°C/W




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