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2N1132 Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N1132
Description  SILICON PLANAR PNP TRANSISTOR
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
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SILICON PLANAR
PNP TRANSISTOR
2N1132
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8069
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-40
V(BR)CBO
Collector-Base
Breakdown Voltage
IC = -10µA
IE = 0
-50
V
VCB = -50V
IE = 0
-10
VCB = -30V
IE = 0
-1.0
ICBO
Collector Cut-Off Current
TA = 150°C
-100
IEBO
Emitter Cut-Off Current
VEB = -5V
IC = 0
-100
µA
ICER
Collector Cut-Off Current
VCE = -50V
RBE <= 10
-10
mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = -150mA
IB = -15mA
-1.3
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = -150mA
IB = -15mA
-1.5
V
IC = -5mA
VCE = -10V
25
hFE
(1)
Forward-current transfer
ratio
IC = -150mA
VCE = -10V
30
100
DYNAMIC CHARACTERISTICS
IC = -50mA
VCE = -10V
| hfe |
Small signal forward-current
transfer ratio
f = 20MHz
3.0
20
VCB = -10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
45
VEB = -0.5V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
80
pF
td
Delay Time
15
tr
Rise Time
IC = -150mA
VCC = -30V
25
ts
Storage Time
IB1 = - IB2 = -15mA
80
tf
Fall Time
25
ns
Notes
Notes
Notes
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%




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