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IR3638DR2G Datasheet(PDF) 3 Page - ON Semiconductor

Part # IR3638DR2G
Description  High Frequency Synchronous
Download  13 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

IR3638DR2G Datasheet(HTML) 3 Page - ON Semiconductor

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IR3638
http://onsemi.com
3
Table 1. PIN FUNCTION DESCRIPTION
Pin
Name
Description
1
FB
Inverting input to the error amplifier. This pin is connected to the output of the regulator via resistor divider
to set the output voltage and provide feedback to the error amplifier.
2
VP/EN
Dual function pin. Non inverting input to the error amplifier. Enable input.
3
NC
No Connect
4
VCC
This pin provides power for the internal blocks of the IC as well as powers the low side driver. A minimum
of 0.1 mF, high frequency capacitor must be connected from this pin to power ground.
5
NC
No Connect
6
LDRV
Output driver for low side MOSFET.
7
GND
IC ground for internal control circuitry.
8
PGND
Power Ground. This pin serves as a separate ground for the MOSFET drivers and should be connected to
the system’s power ground plane.
9
HDRV
Output driver for high side MOSFET. The negative voltage at this pin may cause instability for the gate
drive circuit. To prevent this, a low forward voltage drop diode (e.g. BAT54 or 1N4148) is required
between this pin and Power Ground.
10
VC
This pin powers the high side driver.
11
NC
No Connect
12
COMP
Output of error amplifier. An external resistor and capacitor network is typically connected from this pin to
ground to provide loop compensation.
13
SS
Soft start. This pin provides user programmable soft−start function. Connect an external capacitor from
this pin to ground to set the start up time of the output voltage.
14
NC
No Connect
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
min
max
Unit
Main Supply Voltage Input
VCC
−0.3
20
V
Main Supply Voltage Input
200 ns wide spikes, 400 kHz
VCC_SPK
−0.3
22
V
Supply Voltage for the High side driver
VC
−0.3
20
V
Supply Voltage for the High side driver 200 ns wide spikes, 400 kHz
VC_SPK
−0.3
22
V
VP/EN pin Voltage
VP/EN
−0.3
10 or VCC (Note 1)
V
FB pin Voltage
VFB
−0.3
10 or VCC (Note 1)
V
Rating
Symbol
Value
Unit
Thermal Resistance, Junction−to−Ambient (Note 2)
Rthja
90
K/W
Storage Temperature Range
Tstg
−65 to 150
°C
Junction Operating Temperature
TJ
0 to 150
°C
ESD Withstand Voltage (Note 3)
Human Body Model
Machine Model
VESD
2.0
200
kV
V
Moisture Sensitivity Level
MSL
JEDEC Level 1 @ 260°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: All voltages are referenced to GND pin unless otherwise stated.
1. Maximum = 10 V or VCC, whichever is lower.
2. JEDEC High−K model
3. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114
Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115


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