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IR3638DR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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IR3638DR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 13 page IR3638 http://onsemi.com 3 Table 1. PIN FUNCTION DESCRIPTION Pin Name Description 1 FB Inverting input to the error amplifier. This pin is connected to the output of the regulator via resistor divider to set the output voltage and provide feedback to the error amplifier. 2 VP/EN Dual function pin. Non inverting input to the error amplifier. Enable input. 3 NC No Connect 4 VCC This pin provides power for the internal blocks of the IC as well as powers the low side driver. A minimum of 0.1 mF, high frequency capacitor must be connected from this pin to power ground. 5 NC No Connect 6 LDRV Output driver for low side MOSFET. 7 GND IC ground for internal control circuitry. 8 PGND Power Ground. This pin serves as a separate ground for the MOSFET drivers and should be connected to the system’s power ground plane. 9 HDRV Output driver for high side MOSFET. The negative voltage at this pin may cause instability for the gate drive circuit. To prevent this, a low forward voltage drop diode (e.g. BAT54 or 1N4148) is required between this pin and Power Ground. 10 VC This pin powers the high side driver. 11 NC No Connect 12 COMP Output of error amplifier. An external resistor and capacitor network is typically connected from this pin to ground to provide loop compensation. 13 SS Soft start. This pin provides user programmable soft−start function. Connect an external capacitor from this pin to ground to set the start up time of the output voltage. 14 NC No Connect Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol min max Unit Main Supply Voltage Input VCC −0.3 20 V Main Supply Voltage Input 200 ns wide spikes, 400 kHz VCC_SPK −0.3 22 V Supply Voltage for the High side driver VC −0.3 20 V Supply Voltage for the High side driver 200 ns wide spikes, 400 kHz VC_SPK −0.3 22 V VP/EN pin Voltage VP/EN −0.3 10 or VCC (Note 1) V FB pin Voltage VFB −0.3 10 or VCC (Note 1) V Rating Symbol Value Unit Thermal Resistance, Junction−to−Ambient (Note 2) Rthja 90 K/W Storage Temperature Range Tstg −65 to 150 °C Junction Operating Temperature TJ 0 to 150 °C ESD Withstand Voltage (Note 3) Human Body Model Machine Model VESD 2.0 200 kV V Moisture Sensitivity Level MSL JEDEC Level 1 @ 260°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: All voltages are referenced to GND pin unless otherwise stated. 1. Maximum = 10 V or VCC, whichever is lower. 2. JEDEC High−K model 3. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 |
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