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IPP05CN10LG Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPP05CN10LG Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPP05CN10L G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 11700 15600 pF Output capacitance C oss - 1480 1970 Reverse transfer capacitance C rss -75- Turn-on delay time t d(on) -46- ns Rise time t r - 288 - Turn-off delay time t d(off) -62- Fall time t f -37- Gate Charge Characteristics 6) Gate to source charge Q gs -40- nC Gate to drain charge Q gd -27- Switching charge Q sw -31- Gate charge total Q g - 163 - Gate plateau voltage V plateau - 3.4 - V Output charge Q oss V DD=50 V, V GS=0 V - 152 - nC Reverse Diode Diode continous forward current I S - - 100 A Diode pulse current I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.97 1.2 V Reverse recovery time t rr - 106 ns Reverse recovery charge Q rr - 285 - nC 6) See figure 16 for gate charge parameter definition V R=50 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=4.5 V, I D=100 A, R G=1.6 Ω V DD=50 V, I D=100 A, V GS=0 to 10 V Rev. 1.02 page 3 2008-10-31 |
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