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IPP03N03LBG Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # IPP03N03LBG
Description  OptiMOS2 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP03N03LBG Datasheet(HTML) 6 Page - Infineon Technologies AG

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IPP03N03LB G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=55 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
11 Typ. Capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ
98 %
0
1
2
3
4
5
6
7
-60
-20
20
60
100
140
180
T j [°C]
100 µA
1000 µA
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
T j [°C]
Ciss
Coss
Crss
10
100
1000
10000
0
5
10
15
20
25
30
V DS [V]
25 °C
175 °C
25°C 98%
175°C 98%
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V SD [V]
Rev. 0.95
page 6
2008-05-06


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