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IPP147N12N3G Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPP147N12N3G Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 11 page IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.4 K/W R thJA minimal footprint - - 62 6 cm2 cooling area 4) -- 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 120 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=61 µA 234 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=56 A, (TO263) - 12.3 14.4 m Ω V GS=10 V, I D=56 A, (TO220, TO262) - 12.6 14.7 Gate resistance R G - 1.2 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=56 A 31 62 - S Values 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Thermal resistance, junction - ambient Rev. 2.6 page 2 2010-01-22 |
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