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IPP147N12N3G Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPP147N12N3G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 2420 3220 pF Output capacitance C oss - 304 404 Reverse transfer capacitance C rss -17- Turn-on delay time t d(on) -16- ns Rise time t r -9 - Turn-off delay time t d(off) -24- Fall time t f -4 - Gate Charge Characteristics 5) Gate to source charge Q gs -13- nC Gate to drain charge Q gd -9 - Switching charge Q sw -15- Gate charge total Q g -37 49 Gate plateau voltage V plateau - 5.5 - V Output charge Q oss V DD=60 V, V GS=0 V -42 55 nC Reverse Diode Diode continous forward current I S - - 56 A Diode pulse current I S,pulse - - 224 Diode forward voltage V SD V GS=0 V, I F=56 A, T j=25 °C - 1 1.2 V Reverse recovery time t rr -91 ns Reverse recovery charge Q rr - 259 - nC 5) See figure 16 for gate charge parameter definition V R=60 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=56 A, R G=1.6 Ω V DD=60 V, I D=56 A, V GS=0 to 10 V Rev. 2.6 page 3 2010-01-22 |
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