IPB230N06L3G datasheet(1/10 Pages) INFINEON

Part #	IPB230N06L3G

Description	OptiMOS?? Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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Type

IPB230N06L3 G IPP230N06L3 G

OptiMOS™3 Power-Transistor

Features

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R DS(on) product (FOM)

• N-channel, logic level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC

1) for target applications

• Halogen-free according to IEC61249-2-21

Maximum ratings,

at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

2)

30

A

T C=100 °C

21

Pulsed drain current

2)

I D,pulse

T C=25 °C

120

Avalanche energy, single pulse

3)

E AS

I D=20 A, R GS=25 Ω

13

mJ

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

36

W

Operating and storage temperature

T j, T stg

-55 ... 175

°C

3) See figure 13 for more detailed information

Value

1)J-STD20 and JESD22

2) See figure 3 for more detailed information

V DS

60

V

R DS(on),max

23

m

Ω

I D

30

A

Product Summary

Type

IPB230N06L3 G

IPP230N06L3 G

Package

PG-TO263-3

PG-TO220-3

Marking

230N06L

Rev. 2.2

page 1

2010-01-22

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