IPP120N04S3-02 datasheet(5/9 Pages) INFINEON

Part #	IPP120N04S3-02

Description	OptiMOS-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 9 page

IPB120N04S3-02

IPI120N04S3-02, IPP120N04S3-02

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C; SMD

R DS(on) = f(I D); T j = 25 °C; SMD

parameter: V GS

7 Typ. transfer characteristics

8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V

R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD

parameter: T j

0.5

1

1.5

2

2.5

3

-60

-20

20

60

100

140

180

T j [°C]

5 V

5.5 V

6 V

6.5 V

7 V

10 V

0

100

200

300

400

500

0123

456

V DS [V]

5.5 V

6 V

7 V

5 V

10 V

0

1

2

3

4

5

6

7

8

0

100

200

300

400

500

I D [A]

-55 °C

25 °C

175 °C

0

50

100

150

200

250

300

350

400

23

45

67

V GS [V]

Rev. 1.0

page 5

2007-04-30

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IPP120N04S3-02 Datasheet(PDF) 5 Page - Infineon Technologies AG

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