10A01-10A07

SILICON RECTIFIER DIODES

PRV : 50 - 1000 Volts

Io : 10 Amperes

FEATURES :

* Diffused Junction

* High current capability and Low Forward

Voltage Drop

* Surge Overload Rating to 600A Peak

* Low Reverse Leakage Current

* Pb / RoHS Free

MECHANICAL DATA :

* Case : molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight :

2.049 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

Maximum Repetitive Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Average Rectified Output Current (Note 1) Ta = 50

°C

10

A

Non-Repetitive Peak Forward Surge Current 8.3 ms

Single half sine wave superimposed on rated load

(JEDEC Method)

1.3

V

Maximum DC Reverse Current

Ta = 25

°C

10

µA

at rated DC Blocking Voltage

Ta = 100

°C

100

µA

Typical Junction Capacitance (Note 2)

Cj

pF

Thermal Resistance

0.8

°C/W

Operating and Storage Temperature Range

- 65 to + 150

°C

Notes :

(1) Leads maintained at ambient temperature at a distance of 9.5 mm fro, the case.

(2) Measured at 1.0 MHz and applied reverse volage of 4.0V DC.

Page 1 of 2

Rev. 01 : October 27, 2005

RATING

150

80

600

A

Dimensions in inches and ( millimeters )

D6

0.360 (9.1)

0.340 (8.6)

0.360 (9.1)

0.340 (8.6)

0.052 (1.32)

0.048 (1.22)

1.00 (25.4)

MIN.

1.00 (25.4)

MIN.