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6A05 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # 6A05
Description  SILICON RECTIFIER DIODES
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

6A05 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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6A05 - 6A10
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
2.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
SYMBOL
6A05
6A1
6A2
6A4
6A6
6A8
6A10
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 60
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at IF = 6 A
VF
0.95
1.0
V
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
µA
at rated DC Blocking Voltage
Ta = 100
°C
IR(H)
1.0
mA
Typical junction capacitance at 4.0V, 1MHz
CJ
150
pF
Typical Thermal Resistance (1)
R
θJA
20
°C/W
Junction Temperature Range
TJ
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 : March 25, 2005
A
400
IFSM
RATING
SILICON RECTIFIER DIODES
IF(AV)
6.0
A
0.360 (9.1)
0.340 (8.6)
D6
0.360 (9.1)
0.340 (8.6)
0.052 (1.32)
0.048 (1.22)
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
* Pb / RoHS Free


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