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IPB80N06S3L-06 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB80N06S3L-06 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 9417 - pF Output capacitance C oss - 1181 - Reverse transfer capacitance Crss - 1127 - Turn-on delay time t d(on) -20 - ns Rise time t r -43 - Turn-off delay time t d(off) -55 - Fall time t f -39 - Gate Charge Characteristics 2) Gate to source charge Q gs -44 - nC Gate to drain charge Q gd -24 - Gate charge total Q g - 131 196 Gate plateau voltage V plateau - 4.4 - V Reverse Diode Diode continous forward current 2) I S - - 80 A Diode pulse current 2) I S,pulse - - 320 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time 2) t rr -55 - ns Reverse recovery charge 2) Q rr -70 - nC 1) Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 114 A at 25°C. For detailed information see Application Note ANPS071E 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. V R=27.5 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=3.5 Ω V DD=11 V, I D=80 A, V GS=0 to 10 V Rev. 1.1 page 3 2007-11-07 |
Similar Part No. - IPB80N06S3L-06_07 |
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Similar Description - IPB80N06S3L-06_07 |
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