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IPI80N04S3-06 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPI80N04S3-06 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 9 page IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 1 10 100 1000 0.1 1 10 100 V DS [V] single pulse 0.01 0.05 0.1 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] 0 20 40 60 80 100 120 0 50 100 150 200 T C [°C] 0 20 40 60 80 100 0 50 100 150 200 T C [°C] Rev. 1.1 page 4 2007-05-03 |
Similar Part No. - IPI80N04S3-06 |
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