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1N4933G Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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1N4933G Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  1N4933G - 1N4937G GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS PRV : 50 - 600 Volts Io : 1.0 Amperes FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS Voltage VRMS 35 70 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A VF 1.2 V Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 150 ns Typical Junction Capacitance ( Note 2 ) CJ 15 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 02 : March 24, 2005 A A RATING IF(AV) IFSM 1.0 30 DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) |
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