IPD038N06N3G datasheet(3/9 Pages) INFINEON

Part #	IPD038N06N3G

Description	OptiMOS3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD038N06N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

8000

-

pF

Output capacitance

C oss

-

1700

-

Reverse transfer capacitance

Crss

-58-

Turn-on delay time

t d(on)

-30-

ns

Rise time

t r

-70-

Turn-off delay time

t d(off)

-40-

Fall time

t f

-5

-

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-42-

nC

Gate charge at threshold

Q g(th)

-24-

Gate to drain charge

Q gd

-9

-

Switching charge

Q sw

-27-

Gate charge total

Q g

-98-

Gate plateau voltage

V plateau

-

5.3

-

V

Output charge

Q oss

V DD=30 V, V GS=0 V

-77-

Reverse Diode

Diode continuous forward current

I S

-

90

A

Diode pulse current

I S,pulse

-

360

Diode forward voltage

V SD

V GS=0 V, I F=90 A,

T j=25 °C

-

0.95

1.2

V

Reverse recovery time

t rr

-

125

-

ns

Reverse recovery charge

Q rr

-

110

-

nC

5) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=30 V,

f =1 MHz

V DD=30 V, V GS=10 V,

I D=90 A, R G=3.5 Ω

V DD=30 V, I D=90 A,

V GS=0 to 10 V

V R=30 V, IF=50A,

di F/dt =100 A/µs

Rev.1.02

page 3

2010-08-12

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