IPD30N08S2L-21 datasheet(1/8 Pages) INFINEON

Part #	IPD30N08S2L-21

Description	OptiMOS Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD30N08S2L-21

OptiMOS® Power-Transistor

Features

• N-channel Logic Level - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Unit

Continuous drain current

I D

T C=25 °C, V GS=10 V

1)

30

A

T C=100 °C,

V GS=10 V

2)

30

Pulsed drain current

2)

I D,pulse

T C=25 °C

120

Avalanche energy, single pulse

E AS

I D=30A

240

mJ

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

136

W

Operating and storage temperature

T j, T stg

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

75

V

R DS(on),max

20.5

m

Ω

I D

30

A

Product Summary

PG-TO252-3-11

Type

Package

Marking

IPD30N08S2L-21

PG-TO252-3-11

2N08L21

Rev. 1.0

page 1

2006-07-18

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IPD30N08S2L-21 Datasheet(PDF) 1 Page - Infineon Technologies AG

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