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IPD30N03S4L-09 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD30N03S4L-09 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25°C, V GS=10V 30 A T C=100°C, V GS=10V 2) 30 Pulsed drain current 2) I D,pulse T C=25°C 120 Avalanche energy, single pulse 2) E AS I D=30A 28 mJ Avalanche current, single pulse I AS - 30 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25°C 42 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 - Value V DS 30 V R DS(on),max 9.0 m W I D 30 A Product Summary PG-TO252-3-11 Type Package Marking IPD30N03S4L-09 PG-TO252-3-11 4N03L09 Rev. 1.1 page 1 2010-10-05 |
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