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IPD30N03S4L-09 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPD30N03S4L-09 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPD30N03S4L-09 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 30 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 28 29 30 31 32 33 34 -55 -15 25 65 105 145 T j [°C] 6 V 24 V 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 Q gate [nC] 30 A 15 A 7.5 A 0 25 50 75 100 125 25 75 125 175 T j [°C] Rev. 1.1 page 7 2010-10-05 |
Similar Part No. - IPD30N03S4L-09_10 |
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Similar Description - IPD30N03S4L-09_10 |
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