 |
 |
|
| PHP225 |
|
|||||||||||||||||
 NXP
|
| |||||||||||||||||
|
1 page 
1. Product profile 1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications Motor and actuator drivers Power management Synchronized rectification 1.4 Quick reference data [1] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. PHP225 Dual P-channel intermediate level FET Rev. 03 — 4 January 2011 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - -30 V ID drain current Tsp ≤ 80 °C - - -2.3 A Ptot total power dissipation Tsp =80°C --2 W Static characteristics RDSon drain-source on-state resistance VGS =-10 V; ID =-1A; Tj =25 °C - 0.22 0.25 Ω Dynamic characteristics QGD gate-drain charge VGS =-10 V; ID =-2.3A; VDS =-15 V; Tj =25°C -3 -nC |
