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SWITCHING

N-CHANNEL POWER MOS FET

MOS FIELD EFFECT TRANSISTOR

NP80N06MLG, NP80N06NLG, NP80N06PLG

DATA SHEET

Document No. D19798EJ1V0DS00 (1st edition)

Date Published May 2009 NS

Printed in Japan

2009

(TO-220)

(TO-262)

(TO-263)

DESCRIPTION

The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for

high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP80N06MLG-S18-AY

Note

TO-220 (MP-25K) typ. 1.9 g

NP80N06NLG-S18-AY

Note

Tube

50 p/tube

TO-262 (MP-25SK) typ. 1.8 g

NP80N06PLG-E1B-AY

Note

NP80N06PLG-E2B-AY

Note

Pure Sn (Tin)

Tape

1000 p/reel

TO-263 (MP-25ZP) typ. 1.5 g

Note Pb-free (This product does not contain Pb in the external electrode.)

FEATURES

• Logic level

• Built-in gate protection diode

• Super low on-state resistance

- NP80N06MLG, NP80N06NLG

- NP80N06PLG

• High current rating

±80 A

• Low input capacitance

• Designed for automotive application and AEC-Q101 qualified