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NP80N04PUG Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # NP80N04PUG
Description  MOS FIELD EFFECT TRANSISTOR
Download  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP80N04PUG Datasheet(HTML) 9 Page - Renesas Technology Corp

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Data Sheet D19799EJ1V0DS
7
NP80N04NUG, NP80N04PUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100
1000
10000
100000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
1
10
100
1000
0.1
1
10
100
VDD = 20 V
VGS = 10 V
RG = 0
Ω
td(off)
tr
td(on)
tf
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0
5
10
15
20
25
30
35
0
20406080
100
0
2
4
6
8
10
12
14
ID = 80 A
VGS
VDS
VDD = 32 V
20 V
8 V
QG - Gate Charge - nC
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pulsed
10 V
VGS = 0 V
VF(S-D) - Source to Drain Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
10
100
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A


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