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NP80N04PDG Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # NP80N04PDG
Description  MOS FIELD EFFECT TRANSISTOR
Download  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP80N04PDG Datasheet(HTML) 8 Page - Renesas Technology Corp

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Data Sheet D19795EJ1V0DS
6
NP80N04MDG, NP80N04NDG, NP80N04PDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
2
4
6
8
10
1
10
100
1000
Pulsed
VGS = 4.5 V
10 V
NP80N04MDG, NP80N04NDG
ID - Drain Current - A
0
2
4
6
8
10
1
10
100
1000
Pulsed
VGS = 4.5 V
10 V
NP80N04PDG
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
2
4
6
8
10
0
4
8
12
16
20
ID = 40 A
Pulsed
NP80N04MDG, NP80N04NDG
VGS - Gate to Source Voltage - V
0
2
4
6
8
10
0
4
8
12
16
20
ID = 40 A
Pulsed
NP80N04PDG
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
2
4
6
8
10
-75
-25
25
75
125
175
225
VGS = 4.5 V, ID = 35 A
10 V, 40 A
Pulsed
NP80N04MDG, NP80N04NDG
Tch - Channel Temperature -
°C
0
2
4
6
8
10
-75
-25
25
75
125
175
225
VGS = 4.5 V, ID = 35 A
10 V, 40 A
Pulsed
NP80N04PDG
Tch - Channel Temperature -
°C


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