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IHW30N100R Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IHW30N100R Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IHW30N100R Soft Switching Series q Power Semiconductors 1 Rev. 2.2 Nov 08 Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC 1 for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW30N100R 1000V 30A 1.5V 175 °C H30R100 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 1000 V DC collector current TC = 25°C TC = 100°C I C 60 30 Pulsed collector current, tp limited by Tjmax I Cpuls 90 Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C - 90 Diode forward current TC = 25°C TC = 100°C I F 60 30 Diode pulsed current, tp limited by Tjmax I Fpuls 90 A Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) V GE ±20 ±25 V Power dissipation, TC = 25°C P tot 412 W Operating junction temperature T j -40...+175 °C Storage temperature T stg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1 J-STD-020 and JESD-022 G C E PG-TO-247-3 |
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