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IGP03N120H2 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IGP03N120H2 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 13 page IGP03N120H2 IGW03N120H2 Power Semiconductors 6 Rev. 2.6 Febr. 08 0A 2A 4A 1ns 10ns 100ns 1000ns t r t d(on) t f t d(off) 0Ω 50Ω 100Ω 150Ω 1ns 10ns 100ns 1000ns t r t d(on) t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 82Ω, dynamic test circuit in Fig.E) Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E) 25°C 50°C 75°C 100°C 125°C 150°C 1ns 10ns 100ns 1000ns t r t d(on) t f t d(off) -50°C 0°C 50°C 100°C 150°C 0V 1V 2V 3V 4V 5V typ. min. max. Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82Ω, dynamic test circuit in Fig.E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA) |
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