IDC28D120T6M datasheet(2/4 Pages) INFINEON

Part #	IDC28D120T6M

Description	Diode EMCON 4 Medium Power Chip

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Manufacturer	INFINEON [Infineon Technologies AG]

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IDC28D120T6M

Edited by INFINEON Technologies, AIM PMD D CID T, L4671B, Edition 0.9, 26.06.07

Maximum Ratings

Parameter

Symbol

Condition

Value

Unit

Repetitive peak reverse voltage

V RRM

1200

V

Continuous forward current limited by

Tjmax

I F

1 )

Maximum repetitive forward current

limited by Tjmax

I FRM

100

A

Maximum junction and storage

temperature

Tvj,max ,

Tstg

-40...+175

°C

Reverse bias safe operating area

2)

(RBSOA)

I F,max = 100A, V R,max = 1200V, Tvj,op ≤ 150°C, P max = tbd kW

1 ) depending on thermal properties of assembly

2 ) not subject to production test - verified by design/characterisation

Static Electrical Characteristics (tested on wafer), Tj=25 °C

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Reverse leakage current

I R

V R=12 00V

Tj=25 ° C

10

µA

Cathode-Anode

breakdown Voltage

V Br

I R=0. 2 5 mA

Tj=25°C

1200

V

Forward voltage drop

V F

I F= 50A

Tj=25 ° C

1.35

1.7

2.05

V

Dynamic Electrical Characteristics inductive load (not subject to production test - verified by

design/characterization)

Value

2)

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Peak reverse recovery

current

I R M

IF=A

di/dt=A/

µs

VR=V

VGE =- 15V

Tj = 25 °C

Tj = 125 °C

Tj = 150 °C

tbd

A

Reverse recovery

charge

Qr

IF=A

di/dt=A/

µs

VR=V

VGE =- 15V

Tj = 25 °C

Tj = 125 °C

Tj = 150 °C

tbd

µC

Reverse recovery energy

E rec

IF=A

di/dt=A/

µs

VR=V

VGE =- 15V

Tj = 25 °C

Tj = 125 °C

Tj = 150 °C

tbd

mJ

2) values also influenced by parasitic L- and C- in measurement and package.

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