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HVR516 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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HVR516 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page HVR512 - HVR520 HIGH VOLTAGE RECTIFIER DIODES PRV : 1200 - 2000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL HVR512 HVR514 HVR516 HVR518 HVR520 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 1200 1400 1600 1800 2000 V Maximum RMS Voltage VRMS 840 980 1120 1260 1400 V Maximum DC Blocking Voltage VDC 1200 1400 1600 1800 2000 V Maximum Average Forward Current Ta = 50 °C IF(AV) 5.0 A Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 5.0 A VF 2.2 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Typical Junction Capacitance (Note 1) Cj 36 pF Typical Thermal Resistance (Note 2) R θJA 26 °C/W Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 24, 2005 RATING IFSM 200 A DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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