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HER607 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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HER607 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  HER601 - HER608 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High surge current capability * Low leakage current * Forward voltage drop * Low power loss * High efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : Void-free molded plastic body * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% HER HER HER HER HER HER HER HER 601 602 603 604 605 606 607 608 Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 6.0 A VF 1.1 1.7 V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 50 μA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 75 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : February 20, 2006 RATING UNIT IFSM IF(AV) 6.0 SYMBOL RECTIFIER DIODES HIGH EFFICIENT A A 200 0.360 (9.1) 0.340 (8.6) D6 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 1.00 (25.4) MIN. |
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