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IPP881N08NG Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPP881N08NG Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page IPP881N08N G n-channel Power-Transistor Features • for dc-motor drive systems • N-channel, normal level • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 2) 80 A T C=100 °C 72 Pulsed drain current 2) I D,pulse T C=25 °C 320 Avalanche energy, single pulse 3) E AS I D=73 A, R GS=25 Ω 150 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 136 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1)J-STD20 and JESD22 2) See figure 2 for more detailed information 3) See figure 7 for more detailed information V DS 80 V R DS(on),max 7 m Ω I D 80 A Product Summary Type IPP881N08N G Package PG-TO220-3 Marking 881N08N Rev. 2.1 page 1 2008-06-19 |
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